BULB49DT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Form :

Gull wing

Number of Elements :

1

Operating Temperature :

150°C TJ

Collector Emitter Voltage (VCEO) :

450V

Max Collector Current :

5A

hFE Min :

10

Collector Base Voltage (VCBO) :

850V

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Transistor Type :

NPN

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Factory Lead Time :

8 Weeks

Pin Count :

4

Number of Terminations :

2

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 800mA, 4A

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Polarity/Channel Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation :

80W

Number of Pins :

3

Peak Reflow Temperature (Cel) :

245

Transistor Application :

SWITCHING

Max Power Dissipation :

80W

Current - Collector Cutoff (Max) :

100μA

Collector Emitter Breakdown Voltage :

450V

Contact Plating :

Tin

Emitter Base Voltage (VEBO) :

10V

DC Current Gain (hFE) (Min) @ Ic, Vce :

4 @ 7A 10V

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Radiation Hardening :

No

Base Part Number :

BULB49

Element Configuration :

Single