BUK9Y59-60E,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Feedback Cap-Max (Crss) :

56 pF

Vgs (Max) :

±10V

Additional Feature :

AVALANCHE RATED

Fall Time (Typ) :

7.3 ns

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

67A

Drain-source On Resistance-Max :

0.052Ohm

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

6.1 ns

Reach Compliance Code :

not_compliant

Turn-Off Delay Time :

8.6 ns

Terminal Finish :

Tin (Sn)

Series :

Automotive, AEC-Q101, TrenchMOS™

Pin Count :

4

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Number of Terminations :

4

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

6.1nC @ 5V

JEDEC-95 Code :

MO-235

Gate to Source Voltage (Vgs) :

10V

Rise Time :

9.9ns

Number of Pins :

4

Published :

2013

Rds On (Max) @ Id, Vgs :

52m Ω @ 5A, 10V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Package / Case :

SC-100, SOT-669

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

715pF @ 25V

Transistor Application :

SWITCHING

Power Dissipation :

37W

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

16.7A

Power Dissipation-Max :

37W Tc

Drain to Source Breakdown Voltage :

60V

Drive Voltage (Max Rds On,Min Rds On) :

5V

Max Dual Supply Voltage :

60V

FET Type :

N-Channel

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

16.7A Tc

Factory Lead Time :

12 Weeks