BUK9Y29-40E,115
- Mfr.Part #
- BUK9Y29-40E,115
- Manufacturer
- Nexperia
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 25A LFPAK56
- Stock
- 1,194
- In Stock :
- 1,194
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin (Sn)
- JEDEC-95 Code :
- MO-235
- Reach Compliance Code :
- not_compliant
- Additional Feature :
- AVALANCHE RATED
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Turn On Delay Time :
- 6 ns
- Vgs (Max) :
- ±10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 2.1V @ 1mA
- Drain-source On Resistance-Max :
- 0.029Ohm
- Published :
- 2013
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 4
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 664pF @ 25V
- Factory Lead Time :
- 12 Weeks
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Current - Continuous Drain (Id) @ 25°C :
- 25A Tc
- Package / Case :
- SC-100, SOT-669
- Max Dual Supply Voltage :
- 40V
- Number of Pins :
- 4
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- Rise Time :
- 7ns
- Fall Time (Typ) :
- 5 ns
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 5nC @ 5V
- Turn-Off Delay Time :
- 9 ns
- Continuous Drain Current (ID) :
- 25A
- Number of Channels :
- 1
- Power Dissipation-Max :
- 37W Tc
- Avalanche Energy Rating (Eas) :
- 8.77 mJ
- Gate to Source Voltage (Vgs) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 5A, 10V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 4
- Number of Elements :
- 1
- Datasheets
- BUK9Y29-40E,115

N-Channel Tape & Reel (TR) 25m Ω @ 5A, 10V ±10V 664pF @ 25V 5nC @ 5V SC-100, SOT-669
BUK9Y29-40E,115 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 8.77 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 664pF @ 25V.This device conducts a continuous drain current (ID) of 25A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 9 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 6 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.With 40V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 5V volts (5V).
BUK9Y29-40E,115 Features
the avalanche energy rating (Eas) is 8.77 mJ
a continuous drain current (ID) of 25A
the turn-off delay time is 9 ns
BUK9Y29-40E,115 Applications
There are a lot of Nexperia USA Inc.
BUK9Y29-40E,115 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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