BUK9Y22-100E,115
- Mfr.Part #
- BUK9Y22-100E,115
- Manufacturer
- Nexperia
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 49A LFPAK56
- Stock
- 1,271
- In Stock :
- 1,271
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Number of Elements :
- 1
- JEDEC-95 Code :
- MO-235
- Turn On Delay Time :
- 15.8 ns
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 2.1V @ 1mA
- Surface Mount :
- yes
- Continuous Drain Current (ID) :
- 49A
- Number of Terminations :
- 4
- Number of Pins :
- 4
- Drain to Source Breakdown Voltage :
- 100V
- Package / Case :
- SC-100, SOT-669
- Gate Charge (Qg) (Max) @ Vgs :
- 35.8nC @ 5V
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.022Ohm
- Max Dual Supply Voltage :
- 100V
- Additional Feature :
- AVALANCHE RATED
- Rds On (Max) @ Id, Vgs :
- 21.5m Ω @ 15A, 10V
- Published :
- 2013
- Fall Time (Typ) :
- 31.1 ns
- Rise Time :
- 32.3ns
- Number of Channels :
- 1
- Reach Compliance Code :
- not_compliant
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 53.4 ns
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 49A Tc
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~175°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- Single
- Gate to Source Voltage (Vgs) :
- 10V
- Pin Count :
- 4
- Input Capacitance (Ciss) (Max) @ Vds :
- 4640pF @ 25V
- Power Dissipation-Max :
- 147W Tc
- Transistor Application :
- SWITCHING
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Avalanche Energy Rating (Eas) :
- 80.8 mJ
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 12 Weeks
- Terminal Form :
- Gull wing
- Datasheets
- BUK9Y22-100E,115

N-Channel Tape & Reel (TR) 21.5m Ω @ 15A, 10V ±10V 4640pF @ 25V 35.8nC @ 5V SC-100, SOT-669
BUK9Y22-100E,115 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80.8 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4640pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 49A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 53.4 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 15.8 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 100V.Using drive voltage (5V) reduces this device's overall power consumption.
BUK9Y22-100E,115 Features
the avalanche energy rating (Eas) is 80.8 mJ
a continuous drain current (ID) of 49A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 53.4 ns
BUK9Y22-100E,115 Applications
There are a lot of Nexperia USA Inc.
BUK9Y22-100E,115 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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