BUK9M6R6-30EX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Series :

Automotive, AEC-Q101, TrenchMOS™

Number of Terminations :

4

Published :

2016

Mount :

Surface Mount

Package / Case :

SOT-1210, 8-LFPAK33

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Pin Count :

8

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G4

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

309A

Drain to Source Voltage (Vdss) :

30V

Avalanche Energy Rating (Eas) :

53 mJ

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 5V

Drain-source On Resistance-Max :

0.0066Ohm

Factory Lead Time :

26 Weeks

Continuous Drain Current (ID) :

70A

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

5.3m Ω @ 20A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

5V

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

2001pF @ 25V

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Vgs (Max) :

±10V

Reference Standard :

AEC-Q101; IEC-60134

Current - Continuous Drain (Id) @ 25°C :

70A Tc

DS Breakdown Voltage-Min :

30V

Power Dissipation-Max :

75W Tc

RoHS Status :

ROHS3 Compliant