BUK9M23-80EX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

55.4 mJ

Drive Voltage (Max Rds On,Min Rds On) :

5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Reference Standard :

AEC-Q101; IEC-60134

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G4

Case Connection :

DRAIN

Number of Elements :

1

Vgs (Max) :

±10V

Current - Continuous Drain (Id) @ 25°C :

37A Tc

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.023Ohm

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

80V

DS Breakdown Voltage-Min :

80V

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Mount :

Surface Mount

Series :

Automotive, AEC-Q101, TrenchMOS™

Continuous Drain Current (ID) :

37A

Power Dissipation-Max :

79W Tc

Pulsed Drain Current-Max (IDM) :

148A

Package / Case :

SOT-1210, 8-LFPAK33

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Factory Lead Time :

26 Weeks

Number of Terminations :

4

Published :

2016

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2808pF @ 25V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Pin Count :

8

Rds On (Max) @ Id, Vgs :

20m Ω @ 10A, 10V

Operating Mode :

ENHANCEMENT MODE