BUK9M19-60EX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Reference Standard :

AEC-Q101; IEC-60134

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

60V

JESD-30 Code :

R-PSSO-G4

Case Connection :

DRAIN

FET Type :

N-Channel

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1814pF @ 25V

Rds On (Max) @ Id, Vgs :

17m Ω @ 10A, 10V

Mount :

Surface Mount

Power Dissipation-Max :

62W Tc

Package / Case :

SOT-1210, 8-LFPAK33

Drain-source On Resistance-Max :

0.019Ohm

Drain to Source Voltage (Vdss) :

60V

Series :

Automotive, AEC-Q101, TrenchMOS™

Drive Voltage (Max Rds On,Min Rds On) :

5V

Continuous Drain Current (ID) :

38A

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2016

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

152A

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±10V

Avalanche Energy Rating (Eas) :

30 mJ

Gate Charge (Qg) (Max) @ Vgs :

13.8nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Number of Terminations :

4

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Mounting Type :

Surface Mount

Factory Lead Time :

26 Weeks