BUK9E04-30B,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Vgs(th) (Max) @ Id :

2V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

HTS Code :

8541.29.00.75

Vgs (Max) :

±15V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Case Connection :

DRAIN

JESD-30 Code :

R-PSIP-T3

Transistor Application :

SWITCHING

Power Dissipation-Max :

254W Tc

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

6526pF @ 25V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0044Ohm

Published :

2011

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 5V

Drain to Source Voltage (Vdss) :

30V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

732A

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

75A

Avalanche Energy Rating (Eas) :

1300 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

3m Ω @ 25A, 10V

DS Breakdown Voltage-Min :

30V

Series :

TrenchMOS™

Terminal Finish :

Tin (Sn)