BUK98150-55A,135

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PDSO-G4

Pulsed Drain Current-Max (IDM) :

22A

Input Capacitance (Ciss) (Max) @ Vds :

320pF @ 25V

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

137m Ω @ 5A, 10V

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Drain-source On Resistance-Max :

0.161Ohm

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

55V

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

22 mJ

JESD-609 Code :

e3

Published :

2007

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-261-4, TO-261AA

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

5.3nC @ 5V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Pin Count :

4

Drain Current-Max (Abs) (ID) :

5.5A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

55V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±15V

Number of Terminations :

4

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Series :

Automotive, AEC-Q101, TrenchMOS™

Vgs(th) (Max) @ Id :

2V @ 1mA

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Power Dissipation-Max :

8W Tc

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.29.00.75