BUK9529-100B,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

4360pF @ 25V

Series :

TrenchMOS™

Avalanche Energy Rating (Eas) :

152 mJ

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

186A

Transistor Element Material :

SILICON

Packaging :

Tube

Turn On Delay Time :

30 ns

RoHS Status :

RoHS Compliant

Mounting Type :

Through Hole

Rise Time :

86ns

HTS Code :

8541.29.00.75

Number of Terminations :

3

Contact Plating :

Tin

Vgs (Max) :

±15V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

46A

Additional Feature :

LOGIC LEVEL COMPATIBLE

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

100V

Vgs(th) (Max) @ Id :

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 5V

JEDEC-95 Code :

TO-220AB

Turn-Off Delay Time :

96 ns

Rds On (Max) @ Id, Vgs :

27m Ω @ 25A, 10V

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Surface Mount :

No

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

46A Tc

Case Connection :

DRAIN

Number of Pins :

3

Number of Elements :

1

Power Dissipation-Max :

157W Tc

Pin Count :

3

Max Dual Supply Voltage :

100V

Gate to Source Voltage (Vgs) :

15V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

157W

Fall Time (Typ) :

46 ns

ECCN Code :

EAR99

Package / Case :

TO-220-3