BUK9520-55A,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Terminal Position :

Single

Drain-source On Resistance-Max :

0.021Ohm

Series :

TrenchMOS™

Transistor Element Material :

SILICON

Published :

2010

JESD-30 Code :

R-PSFM-T3

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±10V

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

217A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Matte Tin (Sn)

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

18m Ω @ 25A, 10V

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Surface Mount :

No

Vgs(th) (Max) @ Id :

2V @ 1mA

Additional Feature :

LOGIC LEVEL COMPATIBLE

Avalanche Energy Rating (Eas) :

115 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Packaging :

Tube

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

54A

Power Dissipation-Max :

118W Tc

Drain to Source Voltage (Vdss) :

55V

Current - Continuous Drain (Id) @ 25°C :

54A Tc

Package / Case :

TO-220-3

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

HTS Code :

8541.29.00.75

DS Breakdown Voltage-Min :

55V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

2210pF @ 25V