BTS282Z E3230

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

49V

Published :

2001

JESD-30 Code :

R-PSFM-T7

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 240µA

Reference Standard :

AEC-Q101

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

49V

Drain-source On Resistance-Max :

0.0095Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Series :

TEMPFET®

ECCN Code :

EAR99

Terminal Position :

Single

Operating Temperature :

-40°C~175°C TJ

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

232nC @ 10V

Vgs (Max) :

±20V

Reach Compliance Code :

Compliant

Power Dissipation-Max :

300W Tc

RoHS Status :

RoHS Compliant

Packaging :

Tube

Package / Case :

TO-220-7

Drain Current-Max (Abs) (ID) :

80A

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 36A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

4800pF @ 25V

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

320A

FET Feature :

Temperature Sensing Diode

Avalanche Energy Rating (Eas) :

2000 mJ

Number of Terminations :

7

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Case Connection :

DRAIN