BTS247ZE3062AATMA2
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- Mfr.Part #
- BTS247ZE3062AATMA2
- Manufacturer
- Infineon Technologies
- Package / Case
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 33A TO263-5
- Stock
- 5,905
- In Stock ：
- 5,905
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- Temperature Sensing Diode
- Number of Pins :
- 5
- Supplier Device Package :
- PG-TO263-5-2
- Contact Plating :
- Tin
- Min Operating Temperature :
- -40°C
- Drain to Source Breakdown Voltage :
- 55V
- Rds On (Max) @ Id, Vgs :
- 18mOhm @ 12A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 90nC @ 10V
- Power Dissipation-Max :
- 120W Tc
- Operating Temperature :
- -40°C~175°C TJ
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 55V
- Rise Time :
- 30ns
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 120W
- Rds On Max :
- 18 mΩ
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2V @ 90µA
- Lead Free :
- Contains Lead
- Number of Channels :
- 1
- Max Operating Temperature :
- 175°C
- Factory Lead Time :
- 18 Weeks
- Max Dual Supply Voltage :
- 55V
- Continuous Drain Current (ID) :
- 33A
- Halogen Free :
- Halogen Free
- FET Type :
- N-Channel
- Drain to Source Resistance :
- 18mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1730pF @ 25V
- Turn-Off Delay Time :
- 30 ns
- Weight :
- 1.59999g
- Input Capacitance :
- 1.73nF
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 20 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2014
- Series :
- TEMPFET®
- Turn On Delay Time :
- 15 ns
- Element Configuration :
- Single
- Datasheets
- BTS247ZE3062AATMA2
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N-Channel Tape & Reel (TR) 18mOhm @ 12A, 10V ±20V 1730pF @ 25V 90nC @ 10V 55V TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
BTS247ZE3062AATMA2 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1730pF @ 25V.This device conducts a continuous drain current (ID) of 33A, which is the maximum continuous current transistor can conduct.Using VGS=55V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 55V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 30 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 18mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 15 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 55V power, it supports a dual voltage supply of up to maximum.This transistor requires a drain-source voltage (Vdss) of 55V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
BTS247ZE3062AATMA2 Features
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 18mOhm
a 55V drain to source voltage (Vdss)
BTS247ZE3062AATMA2 Applications
There are a lot of Infineon Technologies
BTS247ZE3062AATMA2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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