BSZ100N03MSGATMA1
- Mfr.Part #
- BSZ100N03MSGATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 10A/40A 8TSDSON
- Stock
- 91,273
- In Stock :
- 91,273
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Reach Compliance Code :
- not_compliant
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 40A
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 5
- Rds On (Max) @ Id, Vgs :
- 9.1m Ω @ 20A, 10V
- Rise Time :
- 2.8ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 8
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Series :
- OptiMOS™
- Pbfree Code :
- No
- Terminal Form :
- NO LEAD
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Mount :
- Surface Mount
- Qualification Status :
- Not Qualified
- Halogen Free :
- Halogen Free
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 8-PowerTDFN
- Transistor Element Material :
- SILICON
- Lead Free :
- Contains Lead
- Power Dissipation :
- 2.1W
- Gate to Source Voltage (Vgs) :
- 16V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Dual Supply Voltage :
- 30V
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Published :
- 2005
- Factory Lead Time :
- 18 Weeks
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 2.1W Ta 30W Tc
- JESD-30 Code :
- S-PDSO-N5
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Threshold Voltage :
- 2V
- Pin Count :
- 8
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta 40A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 1700pF @ 15V
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BSZ100N03MSGATMA1

N-Channel Tape & Reel (TR) 9.1m Ω @ 20A, 10V ±20V 1700pF @ 15V 23nC @ 10V 8-PowerTDFN
BSZ100N03MSGATMA1 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1700pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 40A. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 16V.Powered by 30V, it supports the maximal dual supply voltage.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 2V threshold voltage. By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
BSZ100N03MSGATMA1 Features
a continuous drain current (ID) of 40A
a threshold voltage of 2V
BSZ100N03MSGATMA1 Applications
There are a lot of Infineon Technologies
BSZ100N03MSGATMA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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