BSV52LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Transition Frequency :

400MHz

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

300mW

Frequency :

400MHz

Mounting Type :

Surface Mount

Radiation Hardening :

No

Published :

2006

Collector Emitter Voltage (VCEO) :

12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

225mW

Polarity/Channel Type :

NPN

Gain Bandwidth Product :

400MHz

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Power - Max :

225mW

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Number of Elements :

1

Base Part Number :

BSV52

Number of Terminations :

3

Transistor Type :

NPN

Terminal Form :

Gull wing

Width :

1.4mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 10mA 1V

Surface Mount :

yes

hFE Min :

25

Collector Emitter Saturation Voltage :

400mV

Terminal Position :

Dual

Transistor Element Material :

SILICON

Max Breakdown Voltage :

12V

Pin Count :

3

Collector Emitter Breakdown Voltage :

12V

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Voltage - Rated DC :

12V

Length :

3.04mm

Operating Temperature :

-55°C~150°C TJ

Collector Base Voltage (VCBO) :

20V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

1.2V

Max Collector Current :

100mA

Current - Collector Cutoff (Max) :

100nA ICBO

Current Rating :

200mA

Contact Plating :

Tin

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Height :

1.01mm