BSV52LT1

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Mfr.Part #
BSV52LT1
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 12V 0.1A SOT23-3
Stock
35,695
In Stock :
35,695

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Pin Count :
3
Polarity/Channel Type :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 10mA 1V
Max Collector Current :
100mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
4 Weeks
Emitter Base Voltage (VEBO) :
1.2V
Number of Pins :
3
Terminal Form :
Gull wing
Transistor Type :
NPN
JESD-609 Code :
e3
Base Part Number :
BSV52
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Pbfree Code :
yes
Transistor Element Material :
SILICON
Lead Free :
Lead Free
Collector Emitter Saturation Voltage :
400mV
Voltage - Rated DC :
12V
Transition Frequency :
400MHz
Operating Temperature :
-55°C~150°C TJ
ECCN Code :
EAR99
Package / Case :
TO-236-3, SC-59, SOT-23-3
Radiation Hardening :
No
Power - Max :
225mW
RoHS Status :
ROHS3 Compliant
Gain Bandwidth Product :
400MHz
Number of Terminations :
3
Collector Emitter Breakdown Voltage :
12V
REACH SVHC :
No SVHC
Max Breakdown Voltage :
12V
Contact Plating :
Tin
Vce Saturation (Max) @ Ib, Ic :
400mV @ 5mA, 50mA
Length :
3.04mm
hFE Min :
25
Time@Peak Reflow Temperature-Max (s) :
40
Number of Elements :
1
Published :
2006
Element Configuration :
Single
Packaging :
Tape and Reel (TR)
Surface Mount :
yes
Collector Base Voltage (VCBO) :
20V
Transistor Application :
SWITCHING
Max Power Dissipation :
225mW
Power Dissipation :
300mW
Current Rating :
200mA
Peak Reflow Temperature (Cel) :
260
Current - Collector Cutoff (Max) :
100nA ICBO
Terminal Position :
Dual
Height :
1.01mm
Mounting Type :
Surface Mount
Collector Emitter Voltage (VCEO) :
12V
Frequency :
400MHz
Width :
1.4mm
Datasheets
BSV52LT1
Introducing Transistors - Bipolar (BJT) - Single onsemi BSV52LT1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Base Part Number:BSV52, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Terminations:3, Mounting Type:Surface Mount, BSV52LT1 pinout, BSV52LT1 datasheet PDF, BSV52LT1 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BSV52LT1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BSV52LT1


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

BSV52LT1G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 10mA 1V.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 1.2V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 200mA.In the part, the transition frequency is 400MHz.This device can take an input voltage of 12V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.

BSV52LT1G Features


the DC current gain for this device is 40 @ 10mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 1.2V
the current rating of this device is 200mA
a transition frequency of 400MHz


BSV52LT1G Applications


There are a lot of ON Semiconductor
BSV52LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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