BST52,135

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Mfr.Part #
BST52,135
Manufacturer
Nexperia
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS NPN DARL 80V 1A SOT89
Stock
3,850
In Stock :
3,850

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Contact Plating :
Tin
Max Collector Current :
1A
Packaging :
Tape and Reel (TR)
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
4 Weeks
Vce Saturation (Max) @ Ib, Ic :
1.3V @ 500μA, 500mA
Polarity :
NPN
Number of Elements :
1
Collector Base Voltage (VCBO) :
90V
Turn On Time-Max (ton) :
400ns
JESD-30 Code :
R-PSSO-F3
Max Power Dissipation :
1.3W
JESD-609 Code :
e3
Base Part Number :
BST52
Package / Case :
TO-243AA
Transistor Element Material :
SILICON
Element Configuration :
Single
Terminal Form :
Flat
ECCN Code :
EAR99
Transistor Type :
NPN - Darlington
Collector Emitter Saturation Voltage :
1.3V
DC Current Gain (hFE) (Min) @ Ic, Vce :
2000 @ 500mA 10V
Collector Emitter Breakdown Voltage :
80V
RoHS Status :
ROHS3 Compliant
Published :
2001
Frequency - Transition :
200MHz
Current - Collector Cutoff (Max) :
500nA
Mount :
Surface Mount
Operating Temperature :
150°C TJ
Transistor Application :
SWITCHING
Collector Emitter Voltage (VCEO) :
80V
Case Connection :
COLLECTOR
Radiation Hardening :
No
Mounting Type :
Surface Mount
Max Breakdown Voltage :
80V
Power - Max :
1.3W
Emitter Base Voltage (VEBO) :
5V
Number of Terminations :
3
Series :
Automotive, AEC-Q101
Transition Frequency :
200MHz
Datasheets
BST52,135
Introducing Transistors - Bipolar (BJT) - Single Nexperia BST52,135 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BST52, Package / Case:TO-243AA, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Number of Terminations:3, BST52,135 pinout, BST52,135 datasheet PDF, BST52,135 amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia BST52,135 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia BST52,135


NPN - Darlington 150°C TJ 500nA 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount

BST52,135 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 2000 @ 500mA 10V.The collector emitter saturation voltage is 1.3V, which allows for maximum design flexibility.When VCE saturation is 1.3V @ 500μA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 1A volts can be achieved.

BST52,135 Features


the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz


BST52,135 Applications


There are a lot of Nexperia USA Inc.
BST52,135 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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