BST52,115
- Mfr.Part #
- BST52,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 1A SOT89
- Stock
- 5,626
- In Stock :
- 5,626
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity :
- NPN
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 10V
- Terminal Finish :
- Tin (Sn)
- Published :
- 2001
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 1A
- Terminal Form :
- Flat
- Ambient Temperature Range High :
- 150°C
- Vce Saturation (Max) @ Ib, Ic :
- 1.3V @ 500μA, 500mA
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Frequency - Transition :
- 200MHz
- Transistor Type :
- NPN - Darlington
- Collector Emitter Breakdown Voltage :
- 80V
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Current - Collector Cutoff (Max) :
- 50nA
- Series :
- Automotive, AEC-Q101
- Terminal Position :
- Single
- Power Dissipation :
- 1.3W
- Transition Frequency :
- 200MHz
- Surface Mount :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- hFE Min :
- 1000
- Max Junction Temperature (Tj) :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 1.3V
- Package / Case :
- TO-243AA
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 80V
- Qualification Status :
- Not Qualified
- Turn On Time-Max (ton) :
- 400ns
- Factory Lead Time :
- 4 Weeks
- Base Part Number :
- BST52
- Collector Base Voltage (VCBO) :
- 90V
- Height :
- 1.6mm
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Datasheets
- BST52,115
SOT89.jpg)
NPN - Darlington 150°C TJ 50nA 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount
BST52,115 Overview
In this device, the DC current gain is 2000 @ 500mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.3V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.3V @ 500μA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.200MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.
BST52,115 Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
BST52,115 Applications
There are a lot of Nexperia USA Inc.
BST52,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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