BST52,115

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Mfr.Part #
BST52,115
Manufacturer
Nexperia
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS NPN DARL 80V 1A SOT89
Stock
5,626
In Stock :
5,626

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Polarity :
NPN
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Mounting Type :
Surface Mount
Pin Count :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
DC Current Gain (hFE) (Min) @ Ic, Vce :
2000 @ 500mA 10V
Terminal Finish :
Tin (Sn)
Published :
2001
Operating Temperature :
150°C TJ
Transistor Element Material :
SILICON
Max Collector Current :
1A
Terminal Form :
Flat
Ambient Temperature Range High :
150°C
Vce Saturation (Max) @ Ib, Ic :
1.3V @ 500μA, 500mA
Number of Elements :
1
Packaging :
Tape and Reel (TR)
Frequency - Transition :
200MHz
Transistor Type :
NPN - Darlington
Collector Emitter Breakdown Voltage :
80V
Configuration :
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Current - Collector Cutoff (Max) :
50nA
Series :
Automotive, AEC-Q101
Terminal Position :
Single
Power Dissipation :
1.3W
Transition Frequency :
200MHz
Surface Mount :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
hFE Min :
1000
Max Junction Temperature (Tj) :
150°C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Saturation Voltage :
1.3V
Package / Case :
TO-243AA
Number of Pins :
3
JESD-609 Code :
e3
Emitter Base Voltage (VEBO) :
5V
Collector Emitter Voltage (VCEO) :
80V
Qualification Status :
Not Qualified
Turn On Time-Max (ton) :
400ns
Factory Lead Time :
4 Weeks
Base Part Number :
BST52
Collector Base Voltage (VCBO) :
90V
Height :
1.6mm
Case Connection :
COLLECTOR
ECCN Code :
EAR99
Datasheets
BST52,115
Introducing Transistors - Bipolar (BJT) - Single Nexperia BST52,115 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Surface Mount, Operating Temperature:150°C TJ, Package / Case:TO-243AA, Number of Pins:3, Base Part Number:BST52, BST52,115 pinout, BST52,115 datasheet PDF, BST52,115 amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia BST52,115 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia BST52,115


NPN - Darlington 150°C TJ 50nA 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount

BST52,115 Overview


In this device, the DC current gain is 2000 @ 500mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.3V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.3V @ 500μA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.200MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.

BST52,115 Features


the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz


BST52,115 Applications


There are a lot of Nexperia USA Inc.
BST52,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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