BSP171PH6327XTSA1
- Mfr.Part #
- BSP171PH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 1.9A SOT223-4
- Stock
- 2,332
- In Stock :
- 2,332
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 4
- Fall Time (Typ) :
- 87 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2005
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Width :
- 6.7mm
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 300m Ω @ 1.9A, 10V
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 208 ns
- Contact Plating :
- Tin
- Turn On Delay Time :
- 6 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 460pF @ 25V
- Power Dissipation-Max :
- 1.8W Ta
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Voltage :
- 60V
- Nominal Vgs :
- 1.5 V
- Current - Continuous Drain (Id) @ 25°C :
- 1.9A Ta
- Number of Terminations :
- 4
- Power Dissipation :
- 1.8W
- Continuous Drain Current (ID) :
- 1.45A
- Vgs(th) (Max) @ Id :
- 2V @ 460μA
- Rise Time :
- 25ns
- REACH SVHC :
- No SVHC
- Feedback Cap-Max (Crss) :
- 55 pF
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.3Ohm
- Radiation Hardening :
- No
- Package / Case :
- TO-261-4, TO-261AA
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 10 Weeks
- Termination :
- SMD/SMT
- Packaging :
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Height :
- 1.6mm
- Series :
- SIPMOS®
- Dual Supply Voltage :
- -60V
- Threshold Voltage :
- 1.5V
- Length :
- 6.5mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mounting Type :
- Surface Mount
- Max Dual Supply Voltage :
- -60V
- Halogen Free :
- Halogen Free
- Case Connection :
- DRAIN
- Terminal Position :
- Dual
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 4
- FET Type :
- P-Channel
- Current :
- 19A
- Terminal Form :
- Gull wing
- Drain to Source Breakdown Voltage :
- 60V
- Number of Elements :
- 1
- Datasheets
- BSP171PH6327XTSA1

P-Channel Cut Tape (CT) 300m Ω @ 1.9A, 10V ±20V 460pF @ 25V 20nC @ 10V TO-261-4, TO-261AA
BSP171PH6327XTSA1 Description
BSP171PH6327XTSA1 is a -60V P-channel enhancement mode Field-Effect Transistor (FET). The Infineon can be applied in Power Management Functions, Motor control, On-board charger, DC-DC, Consumer, Logic level translators, Power MOSFET gate drivers, and Other switching applications due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor BSP171PH6327XTSA1 is in the SOT-223-4 package with 1.8W power dissipation.
BSP171PH6327XTSA1 Features
-
Enhancement mode
-
Logic level
-
Avalanche rated
-
Fast switching
-
Dv/dt rated
-
Pb-free lead-plating
-
RoHS compliant, Halogen-free
BSP171PH6327XTSA1 Applications
-
Power Management Functions
-
Motor control
-
On-board charger
-
DC-DC
-
Consumer
-
Logic level translators
-
Power MOSFET gate drivers
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