BSP149 E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Pin Count :

4

Terminal Finish :

Tin/Lead (Sn/Pb)

Drain Current-Max (Abs) (ID) :

0.48A

Vgs (Max) :

±20V

Series :

SIPMOS®

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Surface Mount :

yes

HTS Code :

8541.29.00.95

JESD-30 Code :

R-PDSO-G4

Transistor Element Material :

SILICON

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

1V @ 400μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

FET Feature :

Depletion Mode

JESD-609 Code :

e0

Number of Elements :

1

Package / Case :

TO-261-4, TO-261AA

Power Dissipation-Max :

1.8W Ta

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 5V

Published :

2007

DS Breakdown Voltage-Min :

200V

Current - Continuous Drain (Id) @ 25°C :

660mA Ta

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

200V

Number of Terminations :

4

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 25V

Pulsed Drain Current-Max (IDM) :

1.44A

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

1.8 Ω @ 660mA, 10V

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Drain-source On Resistance-Max :

3.5Ohm