BSP130,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Factory Lead Time :

4 Weeks

Height :

1.7mm

Max Dual Supply Voltage :

300V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

2V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Number of Pins :

3

Mounting Type :

Surface Mount

Power Dissipation :

1.5W

Current - Continuous Drain (Id) @ 25°C :

350mA Ta

Power Dissipation-Max :

1.5W Ta

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G4

Package / Case :

TO-261-4, TO-261AA

Case Connection :

DRAIN

Lead Free :

Lead Free

Element Configuration :

Single

Weight :

4.535924g

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

30

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

6 Ω @ 250mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2001

Drain to Source Breakdown Voltage :

300V

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 25V

FET Type :

N-Channel

Nominal Vgs :

2 V

Length :

6.7mm

Number of Elements :

1

Continuous Drain Current (ID) :

350mA

Width :

3.7mm

Pin Count :

4

Vgs(th) (Max) @ Id :

2V @ 1mA

Radiation Hardening :

No

Terminal Position :

Dual

Number of Terminations :

4

Resistance :

6Ohm