BSP129L6906
- Mfr.Part #
- BSP129L6906
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 2,000
- In Stock :
- 2,000
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- HTS Code :
- 8541.29.00.75
- Rise Time :
- 4.1 ns
- FET Feature :
- Depletion Mode
- JESD-30 Code :
- R-PDSO-G4
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain to Source Voltage (Vdss) :
- 240 V
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 5.7 nC @ 5 V
- Supplier Device Package :
- PG-SOT223-4-21
- Rds On (Max) @ Id, Vgs :
- 6Ohm @ 350mA, 10V
- Terminal Form :
- Gull wing
- Continuous Drain Current Id :
- 0.35
- Voltage Rating (DC) :
- 240 V
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20 V
- Channel Type :
- N
- Power Dissipation (Max) :
- 1.8W (Ta)
- Number of Terminals :
- 4
- Product Status :
- Active
- Drain Current-Max (Abs) (ID) :
- 0.35 A
- Qualification Status :
- Not Qualified
- Turn-On Delay Time :
- 4.4 ns
- Drain to Source Resistance :
- 6 Ω
- Technology :
- MOSFET (Metal Oxide)
- Polarity/Channel Type :
- N-Channel
- Max Power Dissipation :
- 1.8 W
- Vgs (Max) :
- ±20V
- Pulsed Drain Current-Max (IDM) :
- 1.4 A
- JESD-609 Code :
- e3
- Subcategory :
- FET General Purpose Power
- Surface Mount :
- yes
- Drain-source On Resistance-Max :
- 6 Ω
- Input Capacitance (Ciss) (Max) @ Vds :
- 108 pF @ 25 V
- Pin Count :
- 4
- Manufacturer :
- Infineon Technologies AG
- Continuous Drain Current (ID) :
- 350 mA
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Series :
- SIPMOS®
- Terminal Position :
- Dual
- Drain to Source Breakdown Voltage :
- 240 V
- Input Capacitance :
- 108 pF
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Compliant
- Turn-Off Delay Time :
- 22 ns
- Package Shape :
- RECTANGULAR
- Operating Mode :
- Depletion Mode
- Terminal Finish :
- MATTE TIN
- Max Operating Temperature :
- 150 °C
- DS Breakdown Voltage-Min :
- 240 V
- Package :
- Bulk
- Rds On Max :
- 6 Ω
- Power Dissipation-Max (Abs) :
- 1.8 W
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 1V @ 108µA
- RoHS :
- Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 350mA (Ta)
- ECCN Code :
- EAR99
- Power Dissipation :
- 1.8 W
- Min Operating Temperature :
- -55 °C
- Number of Elements :
- 1
- Number of Pins :
- 4
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-261-4, TO-261AA
- Drive Voltage (Max Rds On, Min Rds On) :
- 0V, 10V
- Current Rating :
- 50 mA
- FET Type :
- N-Channel
- Datasheets
- BSP129L6906

MOSFET (Metal Oxide) N-Channel 6Ohm @ 350mA, 10V ±20V 108 pF @ 25 V 5.7 nC @ 5 V 240 V TO-261-4, TO-261AA
BSP129L6906 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 108 pF @ 25 V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 350 mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 240 V, and this device has a drainage-to-source breakdown voltage of 240 VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.35 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 22 ns.Peak drain current is 1.4 A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 6 Ω when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20 V to 1.Normal operation requires that the DS breakdown voltage remain above 240 V.For this transistor to work, a voltage 240 V is required between drain and source (Vdss).
BSP129L6906 Features
a continuous drain current (ID) of 350 mA
a drain-to-source breakdown voltage of 240 V voltage
the turn-off delay time is 22 ns
based on its rated peak drain current 1.4 A.
single MOSFETs transistor is 6 Ω
a 240 V drain to source voltage (Vdss)
BSP129L6906 Applications
There are a lot of Infineon
BSP129L6906 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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