BSP129L6327

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Mfr.Part #
BSP129L6327
Manufacturer
Infineon Technologies
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
N-CHANNEL POWER MOSFET
Stock
69,029
In Stock :
69,029

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Drain Current-Max (Abs) (ID) :
0.35 A
Terminal Form :
Gull wing
DS Breakdown Voltage-Min :
240 V
Reach Compliance Code :
Compliant
Case Connection :
DRAIN
Supplier Device Package :
PG-SOT223-4-21
Surface Mount :
yes
Input Capacitance (Ciss) (Max) @ Vds :
108 pF @ 25 V
Qualification Status :
Not Qualified
Operating Temperature :
-55°C ~ 150°C (TJ)
Nominal Vgs :
-1.4 V
Subcategory :
FET General Purpose Power
Pin Count :
4
Vgs(th) (Max) @ Id :
1V @ 108µA
Gate to Source Voltage (Vgs) :
20 V
Gate Charge (Qg) (Max) @ Vgs :
5.7 nC @ 5 V
Product Status :
Active
Turn-On Delay Time :
4.4 ns
Power Dissipation (Max) :
1.8W (Ta)
Current Rating :
50 mA
Mount :
Surface Mount
Max Power Dissipation :
1.8 W
Terminal Finish :
MATTE TIN
Drain to Source Breakdown Voltage :
240 V
Continuous Drain Current (ID) :
350 mA
Pulsed Drain Current-Max (IDM) :
1.4 A
Number of Elements :
1
Min Operating Temperature :
-55 °C
Technology :
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) :
0V, 10V
JESD-609 Code :
e3
Rds On Max :
6 Ω
Rds On (Max) @ Id, Vgs :
6Ohm @ 350mA, 10V
Package Shape :
RECTANGULAR
Terminal Position :
Dual
Series :
SIPMOS®
Radiation Hardening :
No
FET Type :
N-Channel
Polarity/Channel Type :
N-Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
RoHS :
Compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package :
Bulk
JESD-30 Code :
R-PDSO-G4
Transistor Element Material :
SILICON
REACH SVHC :
No SVHC
Drain to Source Resistance :
6 Ω
Turn-Off Delay Time :
22 ns
ECCN Code :
EAR99
Max Operating Temperature :
150 °C
Number of Pins :
4
Drain-source On Resistance-Max :
6 Ω
Continuous Drain Current Id :
0.35
FET Feature :
Depletion Mode
HTS Code :
8541.29.00.75
Rise Time :
4.1 ns
Drain to Source Voltage (Vdss) :
240 V
Number of Terminals :
4
Lead Free :
Lead Free
Current - Continuous Drain (Id) @ 25°C :
350mA (Ta)
Operating Mode :
Depletion Mode
Power Dissipation :
1.8 W
Channel Type :
N
Manufacturer :
Infineon Technologies AG
Power Dissipation-Max (Abs) :
1.8 W
Package / Case :
TO-261-4, TO-261AA
Voltage Rating (DC) :
240 V
Input Capacitance :
108 pF
Vgs (Max) :
±20V
Datasheets
BSP129L6327
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSP129L6327 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C ~ 150°C (TJ), Number of Pins:4, Package / Case:TO-261-4, TO-261AA, BSP129L6327 pinout, BSP129L6327 datasheet PDF, BSP129L6327 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSP129L6327 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSP129L6327


MOSFET (Metal Oxide) N-Channel 6Ohm @ 350mA, 10V ±20V 108 pF @ 25 V 5.7 nC @ 5 V 240 V TO-261-4, TO-261AA

BSP129L6327 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 108 pF @ 25 V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 350 mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 240 V, and this device has a drainage-to-source breakdown voltage of 240 VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.35 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 22 ns.Peak drain current is 1.4 A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 6 Ω when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20 V to 1.Normal operation requires that the DS breakdown voltage remain above 240 V.For this transistor to work, a voltage 240 V is required between drain and source (Vdss).

BSP129L6327 Features


a continuous drain current (ID) of 350 mA
a drain-to-source breakdown voltage of 240 V voltage
the turn-off delay time is 22 ns
based on its rated peak drain current 1.4 A.
single MOSFETs transistor is 6 Ω
a 240 V drain to source voltage (Vdss)


BSP129L6327 Applications


There are a lot of Infineon
BSP129L6327 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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