BSP129E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Case Connection :

DRAIN

Continuous Drain Current (ID) :

350mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Published :

2001

Rds On (Max) @ Id, Vgs :

6 Ω @ 350mA, 10V

Lead Free :

Contains Lead

JESD-609 Code :

e0

Voltage - Rated DC :

240V

Pulsed Drain Current-Max (IDM) :

0.6A

Power Dissipation :

1.8W

Series :

SIPMOS®

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

350mA Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

108pF @ 25V

Drain-source On Resistance-Max :

20Ohm

Vgs(th) (Max) @ Id :

1V @ 108µA

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin/Lead (Sn/Pb)

Current Rating :

280mA

Number of Terminations :

4

Vgs (Max) :

±20V

Package / Case :

TO-261-4, TO-261AA

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Number of Pins :

4

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

0.2A

FET Feature :

Depletion Mode

Pin Count :

4

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V

Rise Time :

10ns

Gate Charge (Qg) (Max) @ Vgs :

5.7nC @ 5V

Power Dissipation-Max :

1.8W Ta

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ