BSP030,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 24V

Height :

1.7mm

Transistor Element Material :

SILICON

Number of Elements :

1

Contact Plating :

Tin

Operating Temperature :

-65°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

30m Ω @ 5A, 10V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Max Dual Supply Voltage :

30V

FET Type :

N-Channel

Series :

TrenchMOS™

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Fall Time (Typ) :

20 ns

Nominal Vgs :

2 V

Pin Count :

4

Length :

6.7mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Dual

Transistor Application :

SWITCHING

Radiation Hardening :

No

JESD-609 Code :

e3

Lead Free :

Lead Free

Continuous Drain Current (ID) :

10A

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

8.3W

Width :

3.7mm

Drain to Source Breakdown Voltage :

30V

Number of Pins :

4

Mounting Type :

Surface Mount

Rise Time :

10ns

Turn On Delay Time :

8 ns

RoHS Status :

RoHS Compliant

Threshold Voltage :

2V

Package / Case :

TO-261-4, TO-261AA

Resistance :

30mOhm

Number of Terminations :

4

Vgs (Max) :

±20V

REACH SVHC :

No SVHC

Turn-Off Delay Time :

18 ns

Vgs(th) (Max) @ Id :

2.8V @ 1mA

Weight :

4.535924g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

8.3W Tc

Additional Feature :

LOGIC LEVEL COMPATIBLE

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Gate to Source Voltage (Vgs) :

20V