BSM75GB170DN2HOSA1

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Mfr.Part #
BSM75GB170DN2HOSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 1700V 110A 625W
Stock
1
In Stock :
1

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Mount :
Chassis Mount, Screw
Halogen Free :
Not Halogen Free
Pin Count :
7
Voltage - Collector Emitter Breakdown (Max) :
1700V
Operating Temperature :
150°C TJ
Vce(on) (Max) @ Vge, Ic :
3.9V @ 15V, 75A
Turn On Time :
550 ns
Input Capacitance (Cies) @ Vce :
11nF @ 25V
Polarity/Channel Type :
N-Channel
Turn Off Time-Nom (toff) :
740 ns
Mounting Type :
Chassis Mount
Published :
1999
Max Power Dissipation :
625W
ECCN Code :
EAR99
Lead Free :
Lead Free
Terminal Form :
UNSPECIFIED
NTC Thermistor :
No
JESD-30 Code :
R-XUFM-X7
Power - Max :
625W
Element Configuration :
Dual
Configuration :
Half Bridge
Max Collector Current :
110A
Transistor Application :
POWER CONTROL
Collector Emitter Breakdown Voltage :
1.7kV
RoHS Status :
RoHS Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
No
Terminal Position :
UPPER
Number of Elements :
2
Transistor Element Material :
SILICON
Input Capacitance :
11nF
Collector Emitter Voltage (VCEO) :
3.9V
Input :
Standard
Package / Case :
Module
Number of Terminations :
7
Number of Pins :
34
Case Connection :
Isolated
Introducing Transistors - IGBTs - Modules Infineon Technologies BSM75GB170DN2HOSA1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Chassis Mount, Package / Case:Module, Number of Terminations:7, Number of Pins:34, BSM75GB170DN2HOSA1 pinout, BSM75GB170DN2HOSA1 datasheet PDF, BSM75GB170DN2HOSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies BSM75GB170DN2HOSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.



BSM75GB170DN2HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

BSM75GB170DN2HOSA1 Description


BSM75GB170DN2HOSA1 developed by Infineon Technologies is a type of  IGBT module which is a modular semiconductor product which is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge; the packaged IGBT module is directly used in frequency converters, UPS uninterrupted power supply and other equipment. It is characterized by energy saving, convenient installation and maintenance, and stable heat dissipation.



BSM75GB170DN2HOSA1 Features


Energy saving

Convenient installation

Convenient maintenance

Stable heat dissipation



BSM75GB170DN2HOSA1 Applications


Rail transit

Smart grid

Aerospace

Electric vehicles 

New energy equipment


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