BSM200GA170DLCHOSA1

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Mfr.Part #
BSM200GA170DLCHOSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 1700V 400A 1920W
Stock
40
In Stock :
40

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Terminal Position :
UPPER
JESD-30 Code :
R-XUFM-X5
NTC Thermistor :
No
Number of Terminations :
5
Turn On Time :
200 ns
ECCN Code :
EAR99
Case Connection :
Isolated
Package / Case :
Module
Reach Compliance Code :
Compliant
Operating Temperature :
-40°C~125°C
Terminal Form :
UNSPECIFIED
Power - Max :
1920W
Voltage - Collector Emitter Breakdown (Max) :
1700V
Turn Off Time-Nom (toff) :
930 ns
Polarity/Channel Type :
N-Channel
Configuration :
Single
Input Capacitance (Cies) @ Vce :
15nF @ 25V
Mounting Type :
Chassis Mount
Transistor Element Material :
SILICON
Input :
Standard
Vce(on) (Max) @ Vge, Ic :
3.2V @ 15V, 200A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector (Ic) (Max) :
400A
Current - Collector Cutoff (Max) :
400μA
Number of Elements :
1
Surface Mount :
No
Datasheets
BSM200GA170DLCHOSA1
Introducing Transistors - IGBTs - Modules Infineon Technologies BSM200GA170DLCHOSA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:5, Package / Case:Module, Operating Temperature:-40°C~125°C, Mounting Type:Chassis Mount, BSM200GA170DLCHOSA1 pinout, BSM200GA170DLCHOSA1 datasheet PDF, BSM200GA170DLCHOSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies BSM200GA170DLCHOSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.



BSM200GA170DLCHOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

BSM200GA170DLCHOSA1 Description


BSM200GA170DLCHOSA1 developed by Infineon Technologies belongs to the family of IGBT modules. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications. 



BSM200GA170DLCHOSA1 Features


Energy saving

Easy installation and maintenance

Stable heat dissipation

High-efficiency diode



BSM200GA170DLCHOSA1 Applications


Rail transit

Smart grid

Aerospace

Electric vehicles 

New energy equipment


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