BSM100GB170DN2HOSA1
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- Mfr.Part #
- BSM100GB170DN2HOSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Module
- Datasheet
- Download
- Description
- IGBT MOD 1700V 145A 1000W
- Stock
- 44,545
- In Stock ：
- 44,545
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Input Capacitance (Cies) @ Vce :
- 16nF @ 25V
- Package / Case :
- Module
- Current - Collector (Ic) (Max) :
- 145A
- Vce(on) (Max) @ Vge, Ic :
- 3.9V @ 15V, 100A
- Mount :
- Chassis Mount
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 1.7kV
- Input :
- Standard
- Input Capacitance :
- 16nF
- Power - Max :
- 1000W
- Current - Collector Cutoff (Max) :
- 1mA
- RoHS Status :
- RoHS Compliant
- Voltage - Collector Emitter Breakdown (Max) :
- 1700V
- Max Collector Current :
- 145A
- NTC Thermistor :
- No
- Configuration :
- Half Bridge
- Collector Emitter Voltage (VCEO) :
- 3.9V
- Max Power Dissipation :
- 1kW
- Supplier Device Package :
- Module
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Chassis Mount
- Datasheets
- BSM100GB170DN2HOSA1
BSM100GB170DN2HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
BSM100GB170DN2HOSA1 Description
BSM100GB170DN2HOSA1 is a type of IGBT module developed by Infineon Technologies. It is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge; the packaged IGBT module is directly used in frequency converters, UPS uninterrupted power supply and other equipment. It is characterized by energy saving, convenient installation and maintenance, and stable heat dissipation.
BSM100GB170DN2HOSA1 Features
Energy saving
Convenient installation
Convenient maintenance
Stable heat dissipation
BSM100GB170DN2HOSA1 Applications
Rail transit
Smart grid
Aerospace
Electric vehicles
New energy equipment
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