BSC360N15NS3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

Transistor Element Material :

SILICON

Case Connection :

DRAIN

JESD-609 Code :

e3

FET Type :

N-Channel

Package / Case :

8-PowerTDFN

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Packaging :

Tape and Reel (TR)

Pbfree Code :

No

Turn On Delay Time :

9 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Contact Plating :

Tin

Lead Free :

Contains Lead

Terminal Position :

Dual

Power Dissipation-Max :

74W Tc

Series :

OptiMOS™

Drain-source On Resistance-Max :

0.036Ohm

Height :

1.1mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1190pF @ 75V

Max Dual Supply Voltage :

150V

Halogen Free :

Halogen Free

Max Junction Temperature (Tj) :

150°C

Threshold Voltage :

3V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

36m Ω @ 25A, 10V

Reach Compliance Code :

not_compliant

JESD-30 Code :

R-PDSO-F5

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

12 ns

REACH SVHC :

No SVHC

Factory Lead Time :

26 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

150V

Power Dissipation :

74W

Vgs(th) (Max) @ Id :

4V @ 45μA

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Continuous Drain Current (ID) :

33A

Published :

2011

Mounting Type :

Surface Mount

Number of Terminations :

5

Rise Time :

6ns

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Terminal Form :

Flat

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1