BSC22DN20NS3GATMA1
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- Mfr.Part #
- BSC22DN20NS3GATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 7A TDSON-8-5
- Stock
- 2
- In Stock ：
- 2
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 5
- Continuous Drain Current (ID) :
- 7A
- Gate Charge (Qg) (Max) @ Vgs :
- 5.6nC @ 10V
- Threshold Voltage :
- 3V
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 225m Ω @ 3.5A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 7A
- Number of Pins :
- 8
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 34W Tc
- Max Dual Supply Voltage :
- 200V
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- No
- Published :
- 2006
- Lead Free :
- Contains Lead
- Halogen Free :
- Halogen Free
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Terminal Form :
- Flat
- JESD-30 Code :
- R-PDSO-F5
- Series :
- OptiMOS™
- Package / Case :
- 8-PowerTDFN
- Input Capacitance (Ciss) (Max) @ Vds :
- 430pF @ 100V
- Avalanche Energy Rating (Eas) :
- 30 mJ
- ECCN Code :
- EAR99
- Factory Lead Time :
- 26 Weeks
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pin Count :
- 8
- Power Dissipation :
- 34W
- Rise Time :
- 4ns
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Contact Plating :
- Tin
- Drain-source On Resistance-Max :
- 0.225Ohm
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 4V @ 13μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Datasheets
- BSC22DN20NS3GATMA1
N-Channel Tape & Reel (TR) 225m Ω @ 3.5A, 10V ±20V 430pF @ 100V 5.6nC @ 10V 8-PowerTDFN
BSC22DN20NS3GATMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 30 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 430pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 7A.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 200V.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 3V.In addition to reducing power consumption, this device uses drive voltage (10V).
BSC22DN20NS3GATMA1 Features
the avalanche energy rating (Eas) is 30 mJ
a continuous drain current (ID) of 7A
a threshold voltage of 3V
BSC22DN20NS3GATMA1 Applications
There are a lot of Infineon Technologies
BSC22DN20NS3GATMA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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