BSB165N15NZ3G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Qualification Status :

Not Qualified

Terminal Finish :

Silver/Nickel (Ag/Ni)

Power Dissipation-Max (Abs) :

78W

Terminal Form :

NO LEAD

JESD-609 Code :

e4

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

BOTTOM

DS Breakdown Voltage-Min :

150V

JESD-30 Code :

R-MBCC-N3

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Operating Temperature (Max) :

150°C

Number of Elements :

1

Pin Count :

3

ECCN Code :

EAR99

Pbfree Code :

icon-pbfree yes

Pulsed Drain Current-Max (IDM) :

180A

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

Compliant

Drain-source On Resistance-Max :

0.0165ohm

Avalanche Energy Rating (Eas) :

440 mJ

Number of Terminals :

3

Continuous Drain Current Id :

9

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Channel Type :

N

Drain Current-Max (Abs) (ID) :

45A

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED