BS108G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Published :

2007

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Power Dissipation :

350mW

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

350mW Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

JESD-609 Code :

e1

Drive Voltage (Max Rds On,Min Rds On) :

2V 2.8V

Terminal Position :

BOTTOM

Qualification Status :

Not Qualified

FET Type :

N-Channel

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

200V

Voltage - Rated DC :

200V

Current - Continuous Drain (Id) @ 25°C :

250mA Ta

Packaging :

Tube

Element Configuration :

Single

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 25V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Mount :

Through Hole

RoHS Status :

RoHS Compliant

Drain Current-Max (Abs) (ID) :

0.25A

ECCN Code :

EAR99

Turn-Off Delay Time :

15 ns

Rds On (Max) @ Id, Vgs :

8 Ω @ 100mA, 2.8V

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3

Drain-source On Resistance-Max :

8Ohm

Threshold Voltage :

1.5V

Operating Mode :

ENHANCEMENT MODE

Current Rating :

250mA

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Elements :

1

Continuous Drain Current (ID) :

250mA

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Transistor Application :

SWITCHING