BMS4003

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Packaging :

Bulk

Vgs(th) (Max) @ Id :

5V @ 1mA

Mounting Type :

Through Hole

Number of Terminations :

3

Radiation Hardening :

No

Turn-Off Delay Time :

27 ns

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

100V

Mount :

Through Hole

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

100V

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 20V

ECCN Code :

EAR99

Turn On Delay Time :

16 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

2W Ta 25W Tc

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

53 mJ

Drain-source On Resistance-Max :

0.065Ohm

Number of Elements :

1

Rise Time :

33ns

JESD-30 Code :

R-PSFM-T3

Fall Time (Typ) :

15 ns

Package / Case :

TO-220-3 Full Pack

Rds On (Max) @ Id, Vgs :

65m Ω @ 9A, 10V

Published :

2011

Current - Continuous Drain (Id) @ 25°C :

18A Ta

Continuous Drain Current (ID) :

18A

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

11.4nC @ 10V

HTS Code :

8541.29.00.95

Pulsed Drain Current-Max (IDM) :

72A

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Terminal Position :

Single

Pin Count :

3

Gate to Source Voltage (Vgs) :

30V