BLS6G3135S-20,112

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Power - Output :

20W

Terminal Form :

Flat

Current - Test :

50mA

Voltage - Rated :

60V

Published :

2009

Transistor Type :

LDMOS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

BLS6G3135

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

60V

Voltage - Test :

32V

Terminal Position :

Dual

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reference Standard :

IEC-60134

Current Rating (Amps) :

2.1A

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Transistor Application :

AMPLIFIER

Package / Case :

SOT-608B

Packaging :

Tray

JESD-30 Code :

S-CDFP-F2

Factory Lead Time :

13 Weeks

Case Connection :

SOURCE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

2

Frequency :

3.1GHz~3.5GHz

Configuration :

Single

Gain :

15.5dB

Drain Current-Max (Abs) (ID) :

2.1A

Polarity/Channel Type :

N-Channel

Surface Mount :

yes