BLS6G3135-20,112

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Type :

LDMOS

Power - Output :

20W

Factory Lead Time :

13 Weeks

Reference Standard :

IEC-60134

Packaging :

Tray

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Voltage - Rated :

60V

Drain Current-Max (Abs) (ID) :

2.1A

Package / Case :

SOT-608A

Terminal Position :

Dual

Gain :

15.5dB

Published :

2009

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

2

Case Connection :

SOURCE

Base Part Number :

BLS6G3135

Frequency :

3.1GHz~3.5GHz

JESD-30 Code :

S-CDFM-F2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Flat

Operating Temperature (Max) :

225°C

DS Breakdown Voltage-Min :

60V

Transistor Application :

AMPLIFIER

Current Rating (Amps) :

2.1A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Test :

50mA

Transistor Element Material :

SILICON

Configuration :

Single

Voltage - Test :

32V