BG5120KE6327HTSA1
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- Mfr.Part #
- BG5120KE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 6-VSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET N-CH DUAL 8V 20MA SOT-363
- Stock
- 45,871
- In Stock ：
- 45,871
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - RF
- DS Breakdown Voltage-Min :
- 12V
- Terminal Form :
- Gull wing
- Number of Elements :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- COMPLEX
- JESD-30 Code :
- R-PDSO-G6
- Gain :
- 23dB
- RoHS Status :
- RoHS Compliant
- Voltage - Rated :
- 8V
- Reference Standard :
- AEC-Q101
- Drain Current-Max (Abs) (ID) :
- 0.02A
- Frequency :
- 800MHz
- Operating Mode :
- DUAL GATE, DEPLETION MODE
- Transistor Application :
- AMPLIFIER
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Published :
- 2009
- Package / Case :
- 6-VSSOP, SC-88, SOT-363
- Voltage - Test :
- 5V
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- Current Rating :
- 20mA
- Number of Terminations :
- 6
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Noise Figure :
- 1.1dB
- Current - Test :
- 10mA
- Additional Feature :
- LOW NOISE
- Transistor Type :
- 2 N-Channel (Dual)
- Datasheets
- BG5120KE6327HTSA1
BG5120KE6327HTSA1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Infineon Technologies stock available at
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BG5120KE6327 | Infineon Technologies | 393,000 | N-CHANNEL POWER MOSFET |
| BG5120KH6327XTSA1 | Infineon Technologies | 38,139 | MOSFET N-CH DUAL 8V 20MA SOT363 |
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