BFN39E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

Transition Frequency :

100MHz

Polarity/Channel Type :

PNP

Power Dissipation :

1.5W

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 30mA 10V

Collector Base Voltage (VCBO) :

300V

Case Connection :

COLLECTOR

Transistor Type :

PNP

Number of Pins :

4

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Package / Case :

TO-261-4, TO-261AA

Number of Terminations :

4

ECCN Code :

EAR99

hFE Min :

40

Mounting Type :

Surface Mount

Configuration :

Single

Current - Collector (Ic) (Max) :

200mA

Operating Temperature :

150°C TJ

Max Power Dissipation :

1.5W

Mount :

Surface Mount

Frequency :

100MHz

Terminal Form :

Gull wing

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Breakdown Voltage :

300V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 2mA, 20mA

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

100nA ICBO

Terminal Position :

Dual

Transistor Element Material :

SILICON

Max Collector Current :

200mA

Published :

2011

Collector Emitter Voltage (VCEO) :

10V