BFN38E6327HTSA1
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- Mfr.Part #
- BFN38E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.2A SOT223-4
- Stock
- 2,129
- In Stock ：
- 2,129
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Collector Base Voltage (VCBO) :
- 300V
- Transition Frequency :
- 70MHz
- Collector Emitter Voltage (VCEO) :
- 10V
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 40
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 1.5W
- Current - Collector (Ic) (Max) :
- 200mA
- Collector Emitter Breakdown Voltage :
- 300V
- Transistor Application :
- SWITCHING
- RoHS Status :
- RoHS Compliant
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Case Connection :
- COLLECTOR
- Transistor Type :
- NPN
- Number of Terminations :
- 4
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Number of Pins :
- 4
- Frequency :
- 70MHz
- Max Collector Current :
- 200mA
- Configuration :
- Single
- Number of Elements :
- 1
- Published :
- 2011
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 30mA 10V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-261-4, TO-261AA
- Power Dissipation :
- 1.5W
- Transistor Element Material :
- SILICON
- Datasheets
- BFN38E6327HTSA1
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BFN38E6327HTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 30mA 10V.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 70MHz.A maximum collector current of 200mA volts can be achieved.
BFN38E6327HTSA1 Features
the DC current gain for this device is 30 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
a transition frequency of 70MHz
BFN38E6327HTSA1 Applications
There are a lot of Infineon Technologies
BFN38E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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