BFL4001-1E
- Mfr.Part #
- BFL4001-1E
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 4.1A TO220-3 FP
- Stock
- 7,743
- In Stock :
- 7,743
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Package / Case :
- TO-220-3 Full Pack
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 10V
- Continuous Drain Current (ID) :
- 4.1A
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±30V
- Number of Pins :
- 3
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 2.7 Ω @ 3.25A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 5 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 4.1A Tc
- Power Dissipation-Max :
- 2W Ta 37W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 850pF @ 30V
- Drain to Source Breakdown Voltage :
- 900V
- Fall Time (Typ) :
- 52 ns
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Rise Time :
- 49ns
- Published :
- 2013
- Turn-Off Delay Time :
- 156 ns
- Pin Count :
- 3
- Turn On Delay Time :
- 19 ns
- FET Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- Datasheets
- BFL4001-1E

N-Channel Tube 2.7 Ω @ 3.25A, 10V ±30V 850pF @ 30V 44nC @ 10V TO-220-3 Full Pack
BFL4001-1E Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 850pF @ 30V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4.1A amps.In this device, the drain-source breakdown voltage is 900V and VGS=900V, so the drain-source breakdown voltage is 900V in this case.It is [156 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 19 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
BFL4001-1E Features
a continuous drain current (ID) of 4.1A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 156 ns
BFL4001-1E Applications
There are a lot of ON Semiconductor
BFL4001-1E applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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