BF1208,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Gain :

32dB

JESD-30 Code :

R-PDSO-F6

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max (Abs) :

0.18W

Published :

2004

Voltage - Test :

5V

Surface Mount :

yes

Transistor Type :

N-Channel Dual Gate

Operating Mode :

ENHANCEMENT MODE

HTS Code :

8541.21.00.75

Current Rating (Amps) :

30mA

Voltage - Rated :

6V

Number of Elements :

2

Terminal Finish :

Tin

Frequency :

400MHz

RoHS Status :

ROHS3 Compliant

Noise Figure :

1.3dB

Transistor Application :

AMPLIFIER

Drain Current-Max (Abs) (ID) :

0.03A

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Flat

Current - Test :

19mA

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature (Max) :

150°C

JESD-609 Code :

e3

Number of Terminations :

6

Package / Case :

SOT-563, SOT-666

Transistor Element Material :

SILICON