BF1009SE6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - RF

Continuous Drain Current (ID) :

25mA

Mount :

Surface Mount

Case Connection :

SOURCE

Voltage - Test :

9V

Noise Figure :

1.4dB

RoHS Status :

RoHS Compliant

Package / Case :

TO-253-4, TO-253AA

Number of Elements :

1

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

0.025A

Number of Terminations :

4

Gain :

22dB

Published :

2007

Current Rating :

25mA

Frequency :

800MHz

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Max Power Dissipation :

200mW

Voltage - Rated :

12V

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

AMPLIFIER

Transistor Type :

N-Channel

Operating Mode :

DUAL GATE, DEPLETION MODE

Configuration :

Single

Terminal Form :

Gull wing

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

4

Packaging :

Tape and Reel (TR)