BF1005SE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - RF

Current Rating :

25 mA

Drain to Source Voltage (Vdss) :

8 V

RoHS :

Compliant

Power Dissipation-Max (Abs) :

0.2 W

Length :

2.9 mm

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Voltage Rating (DC) :

8 V

Height :

1 mm

Drain Current-Max (Abs) (ID) :

0.025 A

Gain :

22 dB

Surface Mount :

yes

Current Rating (Amps) :

800μA

Output Power :

200 mW

Package :

Bulk

Frequency :

800 MHz

Test Voltage :

5 V

Max Power Dissipation :

200 mW

Voltage Rating :

8 V

Package / Case :

TO-253-4, TO-253AA

Max Operating Temperature :

150 °C

Subcategory :

FET General Purpose Power

Lead Free :

Lead Free

Configuration :

Single

Noise Figure :

1.6 dB

Continuous Drain Current Id :

0.025

Continuous Drain Current (ID) :

25 mA

Gate to Source Voltage (Vgs) :

3 V

Product Status :

Active

Series :

-

Min Operating Temperature :

-55 °C

Power - Output :

-

Mount :

Surface Mount

Transistor Type :

N-Channel

Voltage - Rated :

8 V

Channel Type :

N

Manufacturer :

Infineon Technologies AG

Supplier Device Package :

SOT143 (SC-61)

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

1.3 mm

Input Capacitance :

2.5 pF

ECCN Code :

EAR99

Reach Compliance Code :

Unknown

Number of Pins :

4

Voltage - Test :

5 V