BDW93CTU
- Mfr.Part #
- BDW93CTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 12A TO220-3
- Stock
- 26,805
- In Stock :
- 26,805
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 100V
- hFE Min :
- 1000
- Current Rating :
- 12A
- Max Collector Current :
- 12A
- Factory Lead Time :
- 8 Weeks
- Max Power Dissipation :
- 80W
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-220AB
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Published :
- 2000
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 100V
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 12V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Voltage - Rated DC :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 5A 3V
- Mount :
- Through Hole
- Height :
- 9.4mm
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 2V
- Number of Pins :
- 3
- Weight :
- 1.8g
- Current - Collector Cutoff (Max) :
- 1mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-220-3
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- ECCN Code :
- EAR99
- Length :
- 10.1mm
- Transistor Type :
- NPN - Darlington
- Polarity :
- NPN
- Collector Base Voltage (VCBO) :
- 100V
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 100mA, 10A
- Base Part Number :
- BDW93
- Width :
- 4.7mm
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Datasheets
- BDW93CTU
BDW93CTU Documents

NPN - Darlington 150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDW93CTU Overview
DC current gain in this device equals 750 @ 5A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 100mA, 10A.An emitter's base voltage can be kept at 12V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 12A current rating.In extreme cases, the collector current can be as low as 12A volts.
BDW93CTU Features
the DC current gain for this device is 750 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 12V
the current rating of this device is 12A
BDW93CTU Applications
There are a lot of ON Semiconductor
BDW93CTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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