BDW93CFP
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- Mfr.Part #
- BDW93CFP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 12A TO220FP
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 2.299997g
- Packaging :
- Tube
- Width :
- 4.6mm
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Factory Lead Time :
- 8 Weeks
- ECCN Code :
- EAR99
- hFE Min :
- 100
- Max Collector Current :
- 12A
- Number of Elements :
- 1
- Power Dissipation :
- 33W
- Length :
- 10.4mm
- Max Power Dissipation :
- 33W
- Case Connection :
- Isolated
- Package / Case :
- TO-220-3 Full Pack
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 5A 3V
- Polarity :
- NPN
- Pin Count :
- 3
- Transistor Type :
- NPN - Darlington
- Collector Emitter Voltage (VCEO) :
- 100V
- Height :
- 9.3mm
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-220AB
- Collector Base Voltage (VCBO) :
- 100V
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 100mA, 10A
- Current Rating :
- 12A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 1mA
- Max Breakdown Voltage :
- 350V
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- BDW93
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 100V
- Collector Emitter Saturation Voltage :
- 2V
- JESD-609 Code :
- e3
- Mount :
- Surface Mount, Through Hole
- VCEsat-Max :
- 3 V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 100V
- Emitter Base Voltage (VEBO) :
- 2.5V
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BDW93CFP
NPN - Darlington 150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-220-3 Full Pack Tube Through Hole
BDW93CFP Overview
In this device, the DC current gain is 750 @ 5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 100mA, 10A.Keeping the emitter base voltage at 2.5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (12A).An input voltage of 350V volts is the breakdown voltage.Maximum collector currents can be below 12A volts.
BDW93CFP Features
the DC current gain for this device is 750 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 2.5V
the current rating of this device is 12A
BDW93CFP Applications
There are a lot of STMicroelectronics
BDW93CFP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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