BDW93CFP
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- Mfr.Part #
- BDW93CFP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 12A TO220FP
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 2V
- ECCN Code :
- EAR99
- Transistor Type :
- NPN - Darlington
- Voltage - Rated DC :
- 100V
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 1mA
- Base Part Number :
- BDW93
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-220AB
- Max Breakdown Voltage :
- 350V
- Emitter Base Voltage (VEBO) :
- 2.5V
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Pin Count :
- 3
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 100V
- Transistor Element Material :
- SILICON
- Polarity :
- NPN
- Max Collector Current :
- 12A
- Case Connection :
- Isolated
- Mount :
- Surface Mount, Through Hole
- Height :
- 9.3mm
- Weight :
- 2.299997g
- RoHS Status :
- ROHS3 Compliant
- VCEsat-Max :
- 3 V
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Current Rating :
- 12A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 5A 3V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 100mA, 10A
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time :
- 8 Weeks
- Collector Base Voltage (VCBO) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Length :
- 10.4mm
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 33W
- Collector Emitter Breakdown Voltage :
- 100V
- Width :
- 4.6mm
- Number of Elements :
- 1
- Power Dissipation :
- 33W
- hFE Min :
- 100
- Package / Case :
- TO-220-3 Full Pack
- Mounting Type :
- Through Hole
- Datasheets
- BDW93CFP
BDW93CFP Documents
NPN - Darlington 150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-220-3 Full Pack Tube Through Hole
BDW93CFP Overview
In this device, the DC current gain is 750 @ 5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 100mA, 10A.Keeping the emitter base voltage at 2.5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (12A).An input voltage of 350V volts is the breakdown voltage.Maximum collector currents can be below 12A volts.
BDW93CFP Features
the DC current gain for this device is 750 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 2.5V
the current rating of this device is 12A
BDW93CFP Applications
There are a lot of STMicroelectronics
BDW93CFP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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