BDW93CFP
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- Mfr.Part #
- BDW93CFP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 12A TO220FP
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 100V
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 5A 3V
- Contact Plating :
- Tin
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Emitter Saturation Voltage :
- 2V
- Polarity :
- NPN
- Base Part Number :
- BDW93
- Packaging :
- Tube
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 100mA, 10A
- Mount :
- Surface Mount, Through Hole
- Transistor Type :
- NPN - Darlington
- Number of Pins :
- 3
- Width :
- 4.6mm
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 100V
- Collector Base Voltage (VCBO) :
- 100V
- hFE Min :
- 100
- Max Breakdown Voltage :
- 350V
- Current Rating :
- 12A
- Case Connection :
- Isolated
- ECCN Code :
- EAR99
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation :
- 33W
- Current - Collector Cutoff (Max) :
- 1mA
- Height :
- 9.3mm
- Max Collector Current :
- 12A
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 2.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Max Power Dissipation :
- 33W
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Package / Case :
- TO-220-3 Full Pack
- Length :
- 10.4mm
- Weight :
- 2.299997g
- VCEsat-Max :
- 3 V
- Number of Elements :
- 1
- Datasheets
- BDW93CFP
NPN - Darlington 150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-220-3 Full Pack Tube Through Hole
BDW93CFP Overview
In this device, the DC current gain is 750 @ 5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 100mA, 10A.Keeping the emitter base voltage at 2.5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (12A).An input voltage of 350V volts is the breakdown voltage.Maximum collector currents can be below 12A volts.
BDW93CFP Features
the DC current gain for this device is 750 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 2.5V
the current rating of this device is 12A
BDW93CFP Applications
There are a lot of STMicroelectronics
BDW93CFP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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