BDW93CFP
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- Mfr.Part #
- BDW93CFP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 12A TO220FP
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 10.4mm
- Power Dissipation :
- 33W
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 100V
- Max Power Dissipation :
- 33W
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Weight :
- 2.299997g
- Factory Lead Time :
- 8 Weeks
- Transistor Type :
- NPN - Darlington
- Polarity :
- NPN
- Contact Plating :
- Tin
- Max Breakdown Voltage :
- 350V
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 2.5V
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 12A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 5A 3V
- Current Rating :
- 12A
- Width :
- 4.6mm
- Element Configuration :
- Single
- Base Part Number :
- BDW93
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 100V
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 100mA, 10A
- Voltage - Rated DC :
- 100V
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-220AB
- Packaging :
- Tube
- hFE Min :
- 100
- Package / Case :
- TO-220-3 Full Pack
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Current - Collector Cutoff (Max) :
- 1mA
- Case Connection :
- Isolated
- VCEsat-Max :
- 3 V
- Height :
- 9.3mm
- Collector Base Voltage (VCBO) :
- 100V
- Radiation Hardening :
- No
- Mount :
- Surface Mount, Through Hole
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 2V
- Datasheets
- BDW93CFP
BDW93CFP Documents
NPN - Darlington 150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-220-3 Full Pack Tube Through Hole
BDW93CFP Overview
In this device, the DC current gain is 750 @ 5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 100mA, 10A.Keeping the emitter base voltage at 2.5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (12A).An input voltage of 350V volts is the breakdown voltage.Maximum collector currents can be below 12A volts.
BDW93CFP Features
the DC current gain for this device is 750 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 2.5V
the current rating of this device is 12A
BDW93CFP Applications
There are a lot of STMicroelectronics
BDW93CFP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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