BD809G

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Mfr.Part #
BD809G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 80V 10A TO220
Stock
400
In Stock :
400

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-220-3
Collector Base Voltage (VCBO) :
80V
JEDEC-95 Code :
TO-220AB
Max Breakdown Voltage :
80V
Radiation Hardening :
No
REACH SVHC :
No SVHC
Transistor Element Material :
SILICON
Number of Elements :
1
ECCN Code :
EAR99
Transistor Application :
AMPLIFIER
Emitter Base Voltage (VEBO) :
5V
Surface Mount :
No
Published :
2007
Max Collector Current :
10A
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
40
JESD-609 Code :
e3
Collector Emitter Breakdown Voltage :
80V
Mounting Type :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
1.1V @ 300mA, 3A
Element Configuration :
Single
hFE Min :
30
Max Power Dissipation :
90W
Pin Count :
3
Number of Terminations :
3
Length :
10.28mm
Current Rating :
10A
Current - Collector Cutoff (Max) :
1mA ICBO
Contact Plating :
Tin
Power Dissipation :
90W
Frequency :
1.5MHz
Transition Frequency :
1.5MHz
Peak Reflow Temperature (Cel) :
260
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 4A 2V
Weight :
4.535924g
Factory Lead Time :
2 Weeks
Number of Pins :
3
Pbfree Code :
yes
Voltage - Rated DC :
80V
Case Connection :
COLLECTOR
Lead Free :
Lead Free
Collector Emitter Saturation Voltage :
1.1V
Transistor Type :
NPN
Height :
15.75mm
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Collector Emitter Voltage (VCEO) :
80V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
NPN
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tube
Gain Bandwidth Product :
1.5MHz
Width :
4.82mm
Datasheets
BD809G
Introducing Transistors - Bipolar (BJT) - Single onsemi BD809G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, BD809G pinout, BD809G datasheet PDF, BD809G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD809G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD809G


NPN -55°C~150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BD809G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 4A 2V.With a collector emitter saturation voltage of 1.1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.1V @ 300mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 10A.A transition frequency of 1.5MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 10A volts at its maximum.

BD809G Features


the DC current gain for this device is 15 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 1.5MHz


BD809G Applications


There are a lot of ON Semiconductor
BD809G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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