BD809
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- Mfr.Part #
- BD809
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 10A TO220
- Stock
- 36,709
- In Stock ：
- 36,709
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Factory Lead Time :
- 2 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 15.75mm
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-220AB
- Gain Bandwidth Product :
- 1.5MHz
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 4A 2V
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Voltage - Rated DC :
- 80V
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- Surface Mount :
- No
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 80V
- Max Breakdown Voltage :
- 80V
- Transistor Application :
- AMPLIFIER
- Width :
- 4.82mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Pins :
- 3
- Packaging :
- Tube
- Transition Frequency :
- 1.5MHz
- Published :
- 2007
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 300mA, 3A
- Length :
- 10.28mm
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 80V
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 10A
- Collector Emitter Saturation Voltage :
- 1.1V
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Frequency :
- 1.5MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Type :
- NPN
- Max Power Dissipation :
- 90W
- JESD-609 Code :
- e3
- hFE Min :
- 30
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- 10A
- Weight :
- 4.535924g
- Power Dissipation :
- 90W
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BD809
NPN -55°C~150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD809G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 4A 2V.With a collector emitter saturation voltage of 1.1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.1V @ 300mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 10A.A transition frequency of 1.5MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 10A volts at its maximum.
BD809G Features
the DC current gain for this device is 15 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 1.5MHz
BD809G Applications
There are a lot of ON Semiconductor
BD809G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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