BD180G

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Mfr.Part #
BD180G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 80V 1A TO126
Stock
27,082
In Stock :
27,082

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Length :
7.74mm
Pin Count :
3
hFE Min :
15
Max Collector Current :
1A
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Frequency :
3MHz
Lead Free :
Lead Free
Gain Bandwidth Product :
3MHz
Voltage - Rated DC :
-80V
Number of Pins :
3
Element Configuration :
Single
Factory Lead Time :
2 Weeks
Height :
11.04mm
Emitter Base Voltage (VEBO) :
5V
Polarity/Channel Type :
PNP
Radiation Hardening :
No
Time@Peak Reflow Temperature-Max (s) :
40
Package / Case :
TO-225AA, TO-126-3
Width :
2.66mm
Base Part Number :
BD180
Collector Base Voltage (VCBO) :
80V
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 150mA 2V
Collector Emitter Voltage (VCEO) :
80V
REACH SVHC :
No SVHC
Current - Collector Cutoff (Max) :
1mA ICBO
Collector Emitter Saturation Voltage :
800mV
Transistor Application :
AMPLIFIER
Terminal Finish :
Tin (Sn)
Number of Terminations :
3
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current Rating :
-3A
Operating Temperature :
-65°C~150°C TJ
Transition Frequency :
3MHz
Max Power Dissipation :
30W
Transistor Type :
PNP
Transistor Element Material :
SILICON
Published :
2006
Peak Reflow Temperature (Cel) :
260
Vce Saturation (Max) @ Ib, Ic :
800mV @ 100mA, 1A
Packaging :
Bulk
Collector Emitter Breakdown Voltage :
80V
Pbfree Code :
yes
Mounting Type :
Through Hole
Number of Elements :
1
Power Dissipation :
30W
Surface Mount :
No
ECCN Code :
EAR99
Datasheets
BD180G
Introducing Transistors - Bipolar (BJT) - Single onsemi BD180G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-225AA, TO-126-3, Base Part Number:BD180, Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, BD180G pinout, BD180G datasheet PDF, BD180G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD180G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD180G


PNP -65°C~150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

BD180G Overview


In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

BD180G Features


the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz


BD180G Applications


There are a lot of ON Semiconductor
BD180G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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