BD180G
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- Mfr.Part #
- BD180G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A TO126
- Stock
- 27,082
- In Stock ：
- 27,082
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- No
- Pbfree Code :
- yes
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 3MHz
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 800mV
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Package / Case :
- TO-225AA, TO-126-3
- Current Rating :
- -3A
- Length :
- 7.74mm
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Collector Emitter Voltage (VCEO) :
- 80V
- Factory Lead Time :
- 2 Weeks
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 2.66mm
- Height :
- 11.04mm
- Lead Free :
- Lead Free
- Frequency :
- 3MHz
- Voltage - Rated DC :
- -80V
- Number of Pins :
- 3
- Published :
- 2006
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 30W
- ECCN Code :
- EAR99
- Base Part Number :
- BD180
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 1A
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Transition Frequency :
- 3MHz
- Collector Base Voltage (VCBO) :
- 80V
- Max Power Dissipation :
- 30W
- hFE Min :
- 15
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- AMPLIFIER
- Datasheets
- BD180G
BD180G Documents
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PNP -65°C~150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD180G Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BD180G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
BD180G Applications
There are a lot of ON Semiconductor
BD180G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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