BD180G
- Mfr.Part #
- BD180G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A TO126
- Stock
- 27,082
- In Stock :
- 27,082
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 7.74mm
- Pin Count :
- 3
- hFE Min :
- 15
- Max Collector Current :
- 1A
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 3MHz
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 3MHz
- Voltage - Rated DC :
- -80V
- Number of Pins :
- 3
- Element Configuration :
- Single
- Factory Lead Time :
- 2 Weeks
- Height :
- 11.04mm
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-225AA, TO-126-3
- Width :
- 2.66mm
- Base Part Number :
- BD180
- Collector Base Voltage (VCBO) :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Collector Emitter Voltage (VCEO) :
- 80V
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Collector Emitter Saturation Voltage :
- 800mV
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -3A
- Operating Temperature :
- -65°C~150°C TJ
- Transition Frequency :
- 3MHz
- Max Power Dissipation :
- 30W
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Published :
- 2006
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- Packaging :
- Bulk
- Collector Emitter Breakdown Voltage :
- 80V
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Power Dissipation :
- 30W
- Surface Mount :
- No
- ECCN Code :
- EAR99
- Datasheets
- BD180G
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PNP -65°C~150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD180G Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BD180G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
BD180G Applications
There are a lot of ON Semiconductor
BD180G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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