BD180G
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- Mfr.Part #
- BD180G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A TO126
- Stock
- 27,082
- In Stock ：
- 27,082
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 80V
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Base Part Number :
- BD180
- hFE Min :
- 15
- Max Power Dissipation :
- 30W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 80V
- Surface Mount :
- No
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Pin Count :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Width :
- 2.66mm
- Collector Emitter Saturation Voltage :
- 800mV
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Packaging :
- Bulk
- Frequency :
- 3MHz
- Power Dissipation :
- 30W
- Package / Case :
- TO-225AA, TO-126-3
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Length :
- 7.74mm
- Max Collector Current :
- 1A
- Emitter Base Voltage (VEBO) :
- 5V
- Height :
- 11.04mm
- Transition Frequency :
- 3MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Application :
- AMPLIFIER
- Operating Temperature :
- -65°C~150°C TJ
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 3MHz
- Voltage - Rated DC :
- -80V
- Terminal Finish :
- Tin (Sn)
- REACH SVHC :
- No SVHC
- Published :
- 2006
- JESD-609 Code :
- e3
- Current Rating :
- -3A
- Factory Lead Time :
- 2 Weeks
- Datasheets
- BD180G
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PNP -65°C~150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD180G Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BD180G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
BD180G Applications
There are a lot of ON Semiconductor
BD180G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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