BD180
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- Mfr.Part #
- BD180
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 3A TO126
- Stock
- 3,378
- In Stock ：
- 3,378
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 800mV
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 2 Weeks
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 2.66mm
- Voltage - Rated DC :
- -80V
- Max Power Dissipation :
- 30W
- Collector Base Voltage (VCBO) :
- 80V
- Frequency :
- 3MHz
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Radiation Hardening :
- No
- Published :
- 2006
- Operating Temperature :
- -65°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Package / Case :
- TO-225AA, TO-126-3
- Power Dissipation :
- 30W
- Gain Bandwidth Product :
- 3MHz
- hFE Min :
- 15
- Base Part Number :
- BD180
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Packaging :
- Bulk
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 1A
- Surface Mount :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- Number of Terminations :
- 3
- Length :
- 7.74mm
- Lead Free :
- Lead Free
- Current Rating :
- -3A
- Transition Frequency :
- 3MHz
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Height :
- 11.04mm
- Collector Emitter Voltage (VCEO) :
- 80V
- Collector Emitter Breakdown Voltage :
- 80V
- Datasheets
- BD180
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PNP -65°C~150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD180G Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BD180G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
BD180G Applications
There are a lot of ON Semiconductor
BD180G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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