BD180
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- Mfr.Part #
- BD180
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 3A TO126
- Stock
- 3,378
- In Stock ：
- 3,378
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 80V
- Published :
- 2006
- Gain Bandwidth Product :
- 3MHz
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 800mV
- Operating Temperature :
- -65°C~150°C TJ
- Pbfree Code :
- yes
- Max Power Dissipation :
- 30W
- Lead Free :
- Lead Free
- Power Dissipation :
- 30W
- JESD-609 Code :
- e3
- Length :
- 7.74mm
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- Voltage - Rated DC :
- -80V
- Frequency :
- 3MHz
- Max Collector Current :
- 1A
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 80V
- Surface Mount :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Width :
- 2.66mm
- Transition Frequency :
- 3MHz
- Number of Elements :
- 1
- Base Part Number :
- BD180
- Factory Lead Time :
- 2 Weeks
- Height :
- 11.04mm
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Current Rating :
- -3A
- Collector Base Voltage (VCBO) :
- 80V
- hFE Min :
- 15
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Bulk
- Package / Case :
- TO-225AA, TO-126-3
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- BD180
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PNP -65°C~150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD180G Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BD180G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
BD180G Applications
There are a lot of ON Semiconductor
BD180G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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