BD180
- Mfr.Part #
- BD180
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 3A TO126
- Stock
- 3,378
- In Stock :
- 3,378
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- Length :
- 7.74mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Base Part Number :
- BD180
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Frequency :
- 3MHz
- Radiation Hardening :
- No
- Voltage - Rated DC :
- -80V
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Packaging :
- Bulk
- Current Rating :
- -3A
- RoHS Status :
- ROHS3 Compliant
- Width :
- 2.66mm
- Collector Emitter Voltage (VCEO) :
- 80V
- Collector Base Voltage (VCBO) :
- 80V
- hFE Min :
- 15
- ECCN Code :
- EAR99
- Published :
- 2006
- Power Dissipation :
- 30W
- Operating Temperature :
- -65°C~150°C TJ
- Surface Mount :
- No
- Package / Case :
- TO-225AA, TO-126-3
- Emitter Base Voltage (VEBO) :
- 5V
- Height :
- 11.04mm
- Transition Frequency :
- 3MHz
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 80V
- Factory Lead Time :
- 2 Weeks
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- AMPLIFIER
- Collector Emitter Saturation Voltage :
- 800mV
- Gain Bandwidth Product :
- 3MHz
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 30W
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 1A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- PNP
- Datasheets
- BD180
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PNP -65°C~150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD180G Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BD180G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
BD180G Applications
There are a lot of ON Semiconductor
BD180G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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