BD180

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Mfr.Part #
BD180
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 80V 3A TO126
Stock
3,378
In Stock :
3,378

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Pin Count :
3
Vce Saturation (Max) @ Ib, Ic :
800mV @ 100mA, 1A
Length :
7.74mm
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 150mA 2V
Number of Elements :
1
Number of Terminations :
3
Transistor Element Material :
SILICON
Pbfree Code :
yes
Element Configuration :
Single
Base Part Number :
BD180
JESD-609 Code :
e3
Current - Collector Cutoff (Max) :
1mA ICBO
Frequency :
3MHz
Radiation Hardening :
No
Voltage - Rated DC :
-80V
Lead Free :
Lead Free
REACH SVHC :
No SVHC
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Packaging :
Bulk
Current Rating :
-3A
RoHS Status :
ROHS3 Compliant
Width :
2.66mm
Collector Emitter Voltage (VCEO) :
80V
Collector Base Voltage (VCBO) :
80V
hFE Min :
15
ECCN Code :
EAR99
Published :
2006
Power Dissipation :
30W
Operating Temperature :
-65°C~150°C TJ
Surface Mount :
No
Package / Case :
TO-225AA, TO-126-3
Emitter Base Voltage (VEBO) :
5V
Height :
11.04mm
Transition Frequency :
3MHz
Number of Pins :
3
Collector Emitter Breakdown Voltage :
80V
Factory Lead Time :
2 Weeks
Terminal Finish :
Tin (Sn)
Transistor Application :
AMPLIFIER
Collector Emitter Saturation Voltage :
800mV
Gain Bandwidth Product :
3MHz
Mounting Type :
Through Hole
Peak Reflow Temperature (Cel) :
260
Max Power Dissipation :
30W
Polarity/Channel Type :
PNP
Max Collector Current :
1A
Time@Peak Reflow Temperature-Max (s) :
40
Transistor Type :
PNP
Datasheets
BD180
Introducing Transistors - Bipolar (BJT) - Single onsemi BD180 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Base Part Number:BD180, Operating Temperature:-65°C~150°C TJ, Package / Case:TO-225AA, TO-126-3, Number of Pins:3, Mounting Type:Through Hole, BD180 pinout, BD180 datasheet PDF, BD180 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD180 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD180


PNP -65°C~150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

BD180G Overview


In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

BD180G Features


the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz


BD180G Applications


There are a lot of ON Semiconductor
BD180G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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