BCW33LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

32V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

100nA ICBO

Lead Free :

Lead Free

Number of Terminations :

3

Factory Lead Time :

2 Weeks

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

260

Max Breakdown Voltage :

32V

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Number of Pins :

3

Surface Mount :

yes

Terminal Position :

Dual

Collector Emitter Saturation Voltage :

250mV

Length :

2.9mm

REACH SVHC :

No SVHC

Number of Elements :

1

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Transistor Type :

NPN

Emitter Base Voltage (VEBO) :

5V

Height :

940μm

Collector Base Voltage (VCBO) :

32V

Base Part Number :

BCW33

Terminal Form :

Gull wing

Polarity/Channel Type :

NPN

Package / Case :

TO-236-3, SC-59, SOT-23-3

hFE Min :

420

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Max Collector Current :

100mA

Width :

1.3mm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Collector Emitter Breakdown Voltage :

32V

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Voltage - Rated DC :

32V

Max Power Dissipation :

300mW

JESD-609 Code :

e3

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Published :

2005

Radiation Hardening :

No

Pin Count :

3

Current Rating :

100mA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500µA, 10mA

Power Dissipation :

300mW