BCW30LT1G
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- Mfr.Part #
- BCW30LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 32V 0.1A SOT23-3
- Stock
- 8,481
- In Stock ：
- 8,481
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Base Part Number :
- BCW30
- Current Rating :
- -100mA
- Number of Elements :
- 1
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Power Dissipation :
- 300mW
- Voltage - Rated DC :
- -32V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage :
- 32V
- Collector Base Voltage (VCBO) :
- 32V
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 100mA
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 215 @ 2mA 5V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- hFE Min :
- 215
- Terminal Position :
- Dual
- Factory Lead Time :
- 2 Weeks
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Saturation Voltage :
- -300mV
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Published :
- 1999
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 32V
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 32V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 225mW
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- BCW30LT1G
BCW30LT1G Documents
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW30LT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 215 @ 2mA 5V.The collector emitter saturation voltage is -300mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 500μA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.This device can take an input voltage of 32V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BCW30LT1G Features
the DC current gain for this device is 215 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
BCW30LT1G Applications
There are a lot of ON Semiconductor
BCW30LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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