BCW30LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

Collector Emitter Saturation Voltage :

-300mV

Max Breakdown Voltage :

32V

Pbfree Code :

yes

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Voltage (VCEO) :

32V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Published :

1999

Operating Temperature :

-65°C~150°C TJ

Max Collector Current :

100mA

Terminal Position :

Dual

Lead Free :

Lead Free

Voltage - Rated DC :

-32V

Current Rating :

-100mA

Factory Lead Time :

2 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

215 @ 2mA 5V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Collector Cutoff (Max) :

100nA ICBO

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

hFE Min :

215

Collector Emitter Breakdown Voltage :

32V

Radiation Hardening :

No

Number of Pins :

3

Power Dissipation :

300mW

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Base Part Number :

BCW30

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

JESD-609 Code :

e3

Number of Terminations :

3

Transistor Type :

PNP

Collector Base Voltage (VCBO) :

32V

Element Configuration :

Single

Max Power Dissipation :

225mW

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

PNP

Surface Mount :

yes