BCW30LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

32V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Number of Terminations :

3

Published :

1999

Lead Free :

Lead Free

Voltage - Rated DC :

-32V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Max Collector Current :

100mA

Max Breakdown Voltage :

32V

Peak Reflow Temperature (Cel) :

260

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Max Power Dissipation :

225mW

Contact Plating :

Tin

Emitter Base Voltage (VEBO) :

5V

Factory Lead Time :

2 Weeks

JESD-609 Code :

e3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Type :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Terminal Position :

Dual

Element Configuration :

Single

Transistor Element Material :

SILICON

Polarity/Channel Type :

PNP

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

100nA ICBO

Mounting Type :

Surface Mount

Current Rating :

-100mA

Base Part Number :

BCW30

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

32V

Surface Mount :

yes

Collector Emitter Breakdown Voltage :

32V

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Saturation Voltage :

-300mV

Pbfree Code :

yes

Terminal Form :

Gull wing

Power Dissipation :

300mW

hFE Min :

215

DC Current Gain (hFE) (Min) @ Ic, Vce :

215 @ 2mA 5V

Pin Count :

3

Number of Pins :

3